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Effect of Defects on the Behavior of ZnO Nanoparticle FETs
A.J. Morfa, N. Kirkwood, M. Karg, Th.B. Singh, P. Mulvaney:
The Journal of Physical Chemistry C, 115, 16, 8312-8315 (2011)
doi: 10.1021/jp200208k

The effects of ZnO crystal defects and the ubiquitous defect fluorescence on the electronic properties of nanocrystal thin-films were determined. Films were prepared from particles prepared in DMSO with controllable defect fluorescence. Particles were determined to range in size from 5 to 12 nm on average, with little bearing on the electronic properties. Thin-film electron mobilities were found to decrease from 0.04 cm2 V−1 s−1 to 0.008 cm2 V−1 s−1 with decreasing defect fluorescence, indicating crystal defects are pivotal to high-mobility ZnO nanoparticle films. The threshold voltage of ZnO nanoparticle FET devices was found to decrease from 120 to 40 V while the resistivity increased 100-fold with decreasing defect fluorescence. These results are found to be in excellent agreement with theory and greatly improve our understanding of ZnO nanoparticle conduction.


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